Chemical Vapor Deposition of Silicon Carbide Coated Graphite Disk

Oct 18,2024

Network

The research and application of GaN materials is the forefront and hot spot of global semiconductor research, and it is a new semiconductor material for the development of microelectronic devices and optoelectronic devices.

Product Name: Chemical Vapor Deposition Silicon Carbide Coated Graphite Disk Technology

Achievements owned by: National University of Defense Technology

Brief introduction of results:

The research and application of GaN materials is the forefront and hot spot of global semiconductor research, and it is a new semiconductor material for the development of microelectronic devices and optoelectronic devices. The preparation of GaN materials mainly adopts the method of vapor phase epitaxial growth, and the graphite disk is an essential consumable for epitaxial growth of GaN crystals. Due to the graphite material in the high temperature, corrosive gas environment will occur corrosion off the powder phenomenon, so that the powder impurities into the single crystal material. Therefore, applying a high purity, uniform and dense protective coating is the only way to solve this problem. After chemical vapor deposition of silicon carbide coated graphite plate with high temperature resistance, oxidation resistance, high purity, acid and alkali salt and organic reagents and other characteristics, to meet the needs of high purity single crystal growth environment, foreign countries have as a new consumable in MOCVD epitaxial growth equipment on a large scale, but there is no such a related product in China.

Since 2000, the National University of Defense Technology has been committed to the application of chemical vapor deposition silicon carbide coating preparation technology research, breaking through the key technologies of silicon carbide coating preparation, and having a large size (diameter 700mm) silicon carbide coating preparation Ability, obtained a national invention patent authorization. The characteristics of the silicon carbide coating prepared in our laboratory are:

(1) High temperature oxidation resistance: the oxidation resistance is still very good when the temperature is as high as 1600 ℃;

(2) high purity, uniform, dense, fine particles, no defects;

(3) Erosion resistance;

(4) corrosion resistance: acid, alkali, salt and organic reagents. The technology has a good application prospect in graphite disc.

Silicon carbide coated graphite plate is an essential consumable for semiconductor manufacturers. At present, the products are all imported, expensive and subject to human control.

Therefore, once the silicon carbide coated graphite disk technology developed by our laboratory is industrialized, it will have important strategic significance and market economic value for China's semiconductor industry.

At present, the technology has Hunan Kai Xin Technology, Hunan Dezhi, Zhejiang six parties and other companies.