Silicon Carbide Material China Opportunity Hunan Enrui Customized Silicon Carbide Sintering Furnace

hunan enrui specializing in the production of silicon carbide sintering furnace, welcome major enterprises to inquire.

Emerging industries such as 5G communications and electric vehicles will have a huge demand for silicon carbide materials. Vigorously developing the silicon carbide industry can lead and drive two hundred billion-level industries of raw materials and equipment, and help my country accelerate the transformation and development of high-end materials and high-end equipment manufacturing. pace.

The "14th Five-Year Plan and 2035 Long-term Goal Outline" released this year proposes that my country will accelerate the industrialization of the third-generation semiconductor new materials and new technologies represented by silicon carbide and gallium nitride, and give birth to a number of high-speed Growth of new materials companies.

In an interview with industry experts on July 18, a reporter from Science and Technology Daily found that they hold a positive attitude towards the development of China's third-generation semiconductors. and think that the third-generation semiconductor materials may provide a good opportunity for us to get rid of the passive situation of integrated circuits and achieve chip technology catch-up and overtaking.

Silicon carbide performance advantages, a wide range of uses
The development of the semiconductor industry has gone through three stages so far. The first generation of semiconductor materials is represented by silicon; the second generation of semiconductor materials, gallium arsenide, has also been widely used; and the third generation of semiconductor materials represented by silicon carbide, compared with the previous two Generations of product performance advantages are significant.

Silicon carbide, also known as carbon silica, is a rare mineral that also exists in nature. It is industrially made of quartz sand, petroleum coke (or coal coke) and sawdust as raw materials through high temperature smelting in a resistance furnace.

Mao Kaili, production manager and senior engineer of Shanxi Shuoke Crystal Co., Ltd. (hereinafter referred to as Shanxi Shuoke), introduced that silicon carbide has very unique performance advantages. It has a wide band gap, so that a single device can carry tens of thousands of volts; high thermal conductivity, strong reliability; high carrier mobility, high operating frequency, power saving and energy saving. These advantages make the performance of silicon carbide materials exponentially improved, more widely used.

Silicon carbide is the core material of satellite communications, high-voltage power transmission and transformation, rail transit, electric vehicles, communication base stations and other important fields, especially in aerospace, national defense and other fields has an irreplaceable role.

According to the release of CICC International Consulting, my country is currently in an international dominant position in terms of the technological level and industrialization scale of emerging industries such as 5G communications and electric vehicles, which will promote the sustainable development of my country's upstream semiconductor industry and further improve domestic semiconductor companies. The influence in the international market, especially for silicon carbide devices, will generate huge demand.

Mao Kaili told reporters that N-type silicon carbide wafers can be used in the manufacture of electric vehicles and other fields. According to reports, the current battery life of electric vehicles is still a problem. If the silicon carbide wafer is used, the endurance of the car can be increased by about 10% without changing the battery. Although the application of silicon carbide in electric vehicles has just started, at least one piece of silicon carbide is consumed for every electric vehicle produced. According to the annual growth rate of 70% in the number of electric vehicles in China, silicon carbide will drive a 100 billion level industrial cluster in the field of electric vehicles alone.

Li Bin, general manager of Shanxi Shuoke, told reporters that the silicon carbide industry is now in a period of rapid development. Vigorously developing the silicon carbide industry can lead and drive two hundred billion-level industries of raw materials and equipment, and help my country accelerate the transformation to high-end materials and high-end equipment manufacturing. The pace of development.

Single crystal growth process is catching up with the world's advanced level

In January this year, the first third-generation semiconductor industrial park in Hunan Province and the first domestic silicon carbide R & D and production industry chain production line was capped. According to reports, the project mainly includes the construction of silicon carbide long crystal, substrate, epitaxy, chip, device packaging and other factories and related supporting facilities. After the project is fully completed and put into operation, two production lines of silicon carbide R & D and production industry chain will be formed, The production can be widely used in new energy vehicles, high-speed rail locomotives, aerospace and wireless communications and other fields of high-quality, low-cost, high-stability silicon carbide substrates and various devices. After completion, it is expected to achieve an annual output value of more than 12 billion yuan, and the output value of upstream and downstream supporting industries is expected to exceed 100 billion yuan.

The preparation of silicon carbide single crystal has been a global problem, and the high stability of the crystal growth process is one of the core technology. Previously, this technology was only in the hands of the Americans, and the long-term technical blockade of our country. my country's semiconductor materials have been imported for a long time. The resulting problems are that semiconductor materials are expensive and channels are unstable. They may face the risk of supply interruption at any time, and the quality of products is difficult to be effectively guaranteed.

Li Bin introduced that the growth conditions of silicon carbide crystals are very harsh. They not only need to experience high temperatures but also need a growth environment with precise pressure control. At the same time, the growth rate of these crystals is very slow and the growth quality is not easy to control. In the process of growth, even if there is only a trace of tube holes that cannot be detected by the naked eye, it may affect the growth quality of the crystal. The growth process of silicon carbide crystal is like "blindfold embroidery", because the temperature is too high, it is difficult to artificial intervention, so the crystal growth process is very easy to be disturbed, and how to stabilize the growth environment under harsh growth conditions is precisely the core technology of crystal growth. To produce high quality silicon carbide wafers, we must overcome these technical difficulties.

After repeated research, Shanxi Shuoke finally fully mastered this technology, broke the foreign monopoly, and realized the commercial mass production of high-purity silicon carbide single crystal. At present, Shanxi Shuoke's silicon carbide semiconductor material production capacity is the first in China, with a market share of more than 50%.

Ma Kangfu, manager of Shanxi Shuoke Powder Department, said that the reason why silicon carbide wafers are so precious is not only because of their wide range of applications, but also because their production technology is very difficult to master. A 4-inch diameter wafer can make 1000 chips at a time, while a 6-inch diameter wafer can make 3000 chips at a time. But from 4 inches to 6 inches, crystal growth is the most difficult key technology to crack.

The market potential is far from being fully tapped (Hunan enrui professional production of silicon carbide sintering furnace)

Due to its stable chemical performance, high thermal conductivity, small thermal expansion coefficient and good wear resistance, silicon carbide has many uses besides being used as abrasive. For example, coating silicon carbide powder on the inner wall of turbine impeller or cylinder block by special process can improve its wear resistance and prolong its service life by 1-2 times. The high-grade refractory material used for making it has thermal shock resistance, small volume, light weight, high strength and good energy saving effect; low grade silicon carbide (containing about 85% of silicon carbide) is an excellent deoxidizer, which can speed up the steelmaking speed, and facilitate the control of chemical composition, improve the quality of steel; in addition, silicon carbide is also used in the production of silicon carbide rods for electric heating elements.

Li Bin analyzed that the raw materials of the silicon carbide industry currently account for 65% of the company's costs. By 2025, the demand for raw materials for a company in Shuoke, Shanxi alone will reach about 0.65 billion yuan.

Since the beginning of this year, more than 10 silicon carbide projects have started or made positive progress across the country, which can be described as blooming everywhere: Luxiao Technology invested 10 billion yuan in Hefei, Anhui, to develop research and development and industrialization projects of third-generation semiconductor materials such as silicon carbide, and also invested 0.7 billion yuan to build a silicon carbide substrate project in Shaoxing, Zhejiang; Huada Semiconductor invested 1.05 billion yuan in a project in Ningbo, Zhejiang, it is planned to produce 80000 4-6 inch silicon carbide substrates and epitaxial wafers and silicon carbide-based gallium nitride epitaxial wafers annually. Zhongke Steel Research Institute has built an integrated circuit industrial park in Qingdao, Shandong Province, which is expected to break the dependence of silicon carbide crystal substrates on imports. ROHM-Zhen Drive Technology's joint laboratory in Shanghai is dedicated to developing, testing and promoting power semiconductor technology based on silicon carbide......

Mao Kaili said that although silicon carbide can be used in many fields such as new energy vehicles, high-speed rail locomotives, aerospace and wireless communications, it can be said that "everything can be silicon carbide", but the market potential of silicon carbide is far from being tapped. From the middle reaches of the industrial chain, my country's third-generation semiconductor device market has huge room for growth, or it may become a major driving force for the development of upstream materials.

(Hunan enrui specializing in the production of silicon carbide sintering furnace)
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